Method of isolating a top gate of a MESFET and the resulting device

摘要

A MESFET including a Schottky top gate which extends across the channel region between the source and drain regions and beyond two opposed sides of the dielectric isolation onto the substrate in which the device is built. The portion of the top gate which extends across the channel is disconnected from the portion which extends across the substrate beyond the dielectric isolation. This may result from the removal of the gate material at the dielectric isolation or by the portion of the gate material which is on the dielectric isolation being vertically displaced and disconnected or discontinuous from the portion of the gate material which extends across the channel and that portion which extends across the substrate.