| 摘要 |
A semiconductor laser includes a semiconductor substrate on which a longitudinal groove is provided in the resonator direction, a first semiconductor layer disposed on a region of the semiconductor substrate where the groove is not provided and forming a rectifying junction therewith, a first cladding layer provided on the semiconductor substrate in the groove, an active layer provided on the first cladding layer in the groove, and a second cladding layer provided directly on the active layer and opposite the first semiconductor layer with an interposed insulating layer, such as a gap void of solid material or a gap and current blocking material having only negligible parasitic capacitance.
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