| 摘要 |
A solid-state imaging device uses an MIS light-receiving device having a multilayer film structure. The multilayer film structure is constituted in such a manner that intermediate films are interposed between a gate electrode disposed on a surface of a semiconductor with a gate insulating film therebetween. A protection film is formed above the gate electrode, and/or between the gate electrode and the gate insulating film. Each intermediate film has a refractive index of a value between those of the materials forming the above components. As a result of the thus-constituted multilayer film structure, light transmissivity can be improved, causing a reduction in deterioration in light sensitivity. Consequently, a solid-state imaging device, which has a highly sensitive MIS light-receiving device, can be obtained.
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