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发明名称
Heterojunction bipolar transistor with ballistic operation
摘要
申请公布号
US4929997(A)
申请公布日期
1990.05.29
申请号
US19870136589
申请日期
1987.12.22
申请人
NEC CORPORATION
发明人
HONJO, KAZUHIKO;TANAKA, SHIN-ICHI
分类号
H01L29/205;H01L29/737
主分类号
H01L29/205
代理机构
代理人
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地址
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