发明名称 |
MOS transistor construction with self aligned silicided contacts to gate, source, and drain regions |
摘要 |
An improved integrated circuit structure is disclosed comprising MOS devices formed with at least raised polysilicon gate contact portions. Metal silicide is formed over at least a portion of the source and drain regions to provide conductive paths to the source and drain contacts. In a preferred embodiment, the source and drain contacts also comprise raised contacts which are also formed from the same polysilicon layer to permit formation of a highly planarized structure with self-aligned contacts formed by planarizing an insulating layer formed over the structure sufficiently to expose the upper surface of all of the contacts.
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申请公布号 |
US4929992(A) |
申请公布日期 |
1990.05.29 |
申请号 |
US19860869759 |
申请日期 |
1986.06.02 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
THOMAS, MAMMEN;WEINBERG, MATTHEW |
分类号 |
H01L21/768;H01L21/8249;H01L27/06 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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