| 摘要 |
PURPOSE:To form a plurality of storage capacities by dividing a first electrode into a plurality after forming the first electrode to obtain the storage capacity of a semiconductor device or before forming an insulating film to obtain the storage capacity. CONSTITUTION:After forming the first electrode 8A, at least one place of opening 11 is formed at the first electrode on a contact part 7b and a plurality of pieces, for example, two pieces of the first electrodes 8Aa and 8Ab are formed after removing the first electrode 8A partially. Then, an oxide film which acts as an insulating film 9 of the storage capacity as well as a polycrystal silicon film 10 which acts as the second electrode 10A are formed. Then second electrode 10A is formed after removing unnecessary parts of the polycrystal silicon film 10 and an insulating film 9 so that the storage capacities are formed at the first electrodes 8Aa and 8Ab as well as at the place where an opening 11 is provided by using a photoresist film as a mask with a selective etching process. |
