| 摘要 |
Negative photoresist compositions are made from copolymers of 4-hydroxystyrene and dialkyl muconates, alkyl sorbates, alkadiene monomers or allyl esters of ethylenically unsaturated acids plus a photosensitizer. Such compositions are useful in photolithographic and photomasking operations in fabricating microelectronic devices, printed circuits, semiconductors, printing plates, dies and the like.
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