| 摘要 |
<p>PURPOSE:To obtain a thin film resistance element having both large specific resistance and small temperature coefficient by a method wherein an oxide of Bi and/or La-Sr-M (one of Cd, Znm Mg and Hg)-Cu-O is sputtered on a substrate. CONSTITUTION:The powders of raw material Bi2O3 and/or La2O3 of 0.25 to 1.5mol%, SrO of 0.5 to 2.5mol%, Mo of 0.5 to 2mol% (provided that M contains one of Cd, Zn, Mg and Hg), CuO of 1 to 4mol% are blended; kneading an calcinating operations are repeated alternately; and a homogenous material is obtained. Then, after its compaction treatment, it is sintered to form a sintered body of the prescribed composition. Using the above-mentioned sintered body as a target, a sputtering operation is conducted, and a Bi (and/or La)-Sr-M- Cu-O oxide thin film is formed on a substrate. When the thin film resistance element of the prescribed thickness, width and length is formed by patterning, a fixed high resistance value can be maintained over a wide temperature scope. Using the above-mentioned constitution, the electronic circuit having a thin film resistance element can be obtained easily.</p> |
