| 摘要 |
PURPOSE:To obtain a developing method which is free from defects in the shapes of patterns owing to the stripped pieces of resist films in a photoetohing method by dissolving the photoresist films of the desired parts in the peripheral and side surfaces of a material to be worked by developing. CONSTITUTION:In a photomask and a developing method using said mask used for a photoetching method, this invention relates to a photomask (7) having the parts (9, 10) disposed with patterns, and the parts (13) corresponding to the peripheral and side surface parts of a wafer (14) which is the material to be worked where no patterns are disposed and a developing method for matching the photomask and the material to be worked, exposing and developing the photoresist films and removing the photoresist films in the peripheral and side surface parts of the material to be worked in the stage of developing; therefore the scattering of the resist films by the contact with jigs, etc. after the developing is obviated, and the defects in the shapes of patterns owing to the sticking of such small pieces are prevented. |
