| 摘要 |
PURPOSE:To efficiently remove Si deposits in a short period of time by adding a rare gas to a gaseous mixture composed of SF6 and O2 compd. as an etching gas and effecting a plasma reaction at the time of removing the Si film deposited on the inside wall of an RF plasma CVD device which forms the Si deposited film by the plasma reaction by using a silane compd. as a raw material. CONSTITUTION:A substrate 206 made of glass is disposed in a film forming chamber 201 having an RF plasma generator 202 and the inside of the film forming chamber 201 is evacuated to a vacuum by a discharge valve 204. The substrate 206 is heated to about 250 deg.C by a heater 205 and the gaseous silane is supplied from a gas introducing pipe 208 for film formation to form the Si single crystal film in a vapor phase on the substrate 206 by the plasma reaction. The Si deposits and falls onto the inside wall of the film forming chamber 201 as well in this case and since this Si deteriorates the quality of the Si single crystal film, the cleaning gas 209 formed by mixing 5 to 60% rare gas, such as He, Ne, Ar or Kr with the gaseous mixture composed of 25 to 80% oxygen-contg. gas, such as O2 or No and the balance SF6 is supplied into the film forming chamber 201 to clean and remove the Si deposited on the inside wall of the film forming chamber 201. |
