| 摘要 |
PURPOSE:To enhance an integration density by a structure wherein a potential of a word line is transmitted to an element region without an intermediary of a transfer gate electrode in order to eliminate a need to form the transfer gate electrode having a complicated and fine pattern. CONSTITUTION:When a potential of word lines 8' is transmitted to element regions 1, the potential of the word lines 8' is transmitted directly to the element regions 1 without an intermediary of a transfer gate electrode. Accordingly, since the transfer gate electrode having a complicated and fine pattern is not formed, this is advantageous in order to enhance an integration density. In addition, since a process to make contact holes 5' used to connect the word lines 8' to the transfer gate electrode is eliminated, a process is simplified; this is also advantageous in order to enhance the integration density and to lower a cost; in addition, a contact resistance at the word lines can be reduced; a high-speed operation can be realized. Thereby, a bottleneck at enhancing the integration density can be improved; the integration density can be further enhanced. |
