| 摘要 |
A method for forming a deposited film comprises introducing a gaseous starting material for formation of a deposited film and a gaseous halogenic oxidizing agent (X) having the property of oxidation action on said starting material, at least one oxidizing agent (ON) of gaseous oxygen type and nitrogen type oxidizing agents, and preferably also a gaseous material (D) containing a component for valence electron controller as the constituent into a reaction space to effect chemical contact among them to thereby form a plural number of precursors containing precursors under excited states, and forming a deposited film on a substrate existing in the film forming space with the use of at least one precursor of these precursors as the feeding source for the constituent element of the deposited film. |
