WIRING CORRECTING AND INSPECTING DEVICE, WIRING CORRECTING AND INSPECTING METHOD USING THIS DEVICE AND PRODUCTION OF SEMICONDUCTOR DEVICE USING THIS METHOD

摘要

PURPOSE:To correct and inspect metal wirings and to produce a semiconductor device by providing an ion beam irradiation source and irradiation source for laser light as annealing light and laser probe light which execute working and reforming of the wirings on the prescribed surface of the semiconductor element. CONSTITUTION:The ion beam irradiation source 6 is provided above a treating chamber 2 which is a treating space to be housed with the semiconductor device. A gas supplying device 12 which supplies a reaction gas 11 consisting of an org. metal compd. into the treating chamber 2 is provided. A detector 13 is disposed in the opposite direction of this device 12 and detects the quantity of the secondary electrons 31 from the element 4 by irradiation of the ion beam so that the information on the wiring and reforming of the metal wirings to be executed on the element surface can be transmitted to an image processing section 14. On the other hand, a laser irradiation mechanism 17 is provided diagonally above an X-Y stage 3 in the chamber 2 so that the prescribed position of the element 4 can be irradiated with the laser light 18. The laser light is usable as the annealing light and the laser probe light.