发明名称 SEMICONDUCTOR STORAGE DEVICE AND MANUFACTURE THEREOF
摘要 PURPOSE:To increase the capacity of a capacitor by forming the lower and upper electrode layers for forming the capacitor partly in a 3-layer laminated structure in which both the upper and lower faces of a lower electrode are laminated on an upper electrode through a dielectric layer. CONSTITUTION:The lower layer 11a of an upper electrode 11 for forming a capacitor 5 is laminated between a lower electrode 9 and an insulating film 12 covering the upper face of a gate electrode 8, and further laminated between the electrode 9 and the film 12 covering the upper face of a word line 1d. The lower layer 11a of the electrode 11 is connected to the upper layer 11b of the electrode 11. Further, a dielectric layer 10 is continuously formed between the opposed faces of the electrodes 11 and 9. Thus, since the opposed area between the electrodes 11 and 9 is increased in a region formed with a 3-layer laminated structure, the charge storage amount of the capacitor can be increased.
申请公布号 JPH02135775(A) 申请公布日期 1990.05.24
申请号 JP19880290724 申请日期 1988.11.16
申请人 MITSUBISHI ELECTRIC CORP 发明人 IKEDA TATSUHIKO;NIWANO KAZUTO;HASHIMOTO TOMOAKI;SHIRAHATA MASAYOSHI
分类号 H01L27/04;H01L21/822;H01L21/8242;H01L27/10;H01L27/108 主分类号 H01L27/04
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