| 摘要 |
PURPOSE:To prevent the generation of an electromotive force of anti-parallel diodes and to obtain a solar battery cell of high efficiency by covering the diodes with a surface layer electrode metal layer. CONSTITUTION:A reverse conductivity type semiconductor layer 102 to a semiconductor substrate 100 is provided at part of the solar cell function forming face side of the substrate 100 to form a bypass diode, and solar cell function parts 210-205 are formed on the substrate 100 except the bypass diode forming region. In this case, a P-N junction between the substrate and the cell function part is formed to have substantially no reverse voltage blocking capacity, one electrode 104 is so formed as to electrically connect a solar cell function part surface semiconductor layer to the bypass diode part to cover the whole bypass diode part with a surface electrode metal layer 402, and other electrode 403 is further formed on the rear face of the substrate 100. Thus, the light having a wavelength contributing to an optical generation which can arrive at the junction of the anti-parallel diode can be completely shielded, thereby preventing the generation of an electromotive force of the anti-parallel diodes. |
