发明名称 LEAD FORMING DIE FOR SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE:To obtain a die with which solder plating on the surfaces of the leads of a semiconductor device is prevented from adhering to the metal surface of the die when the leads are formed and the leads can be formed into normal shapes and the highly reliable semiconductor device can be obtained by a method wherein the parts of the recess in the die for forming the leads into J-shapes which are brought into contact with the leads are coated with films for protecting the leads. CONSTITUTION:A semiconductor device 1 from which leads 2 are drawn out is housed in a die and a recess for forming the leads 2 into J-shapes is provided in the die. The parts of the recess which are brought into contact with the leads 2 are coated with films 9 for protecting the leads 2. For instance, the films 9 are formed by an amorphous chrome plating method. The amorphous chrome plating film is an alloy film containing chrome and about 3% of carbon and having a thickness about 5mum. With this constitution, even if the lead 2 is formed while it is rubbed against the surface of the forming die 3, as the friction between the lead 2 and the surface of the forming die 3 is small, the solder plating covering the surface of the lead 2 is not peeled off, so that the adhesion of the solder plating covering the surface of the lead 2 to the surface of the forming die 3 can be avoided.</p>
申请公布号 JPH02134856(A) 申请公布日期 1990.05.23
申请号 JP19880289289 申请日期 1988.11.15
申请人 MITSUBISHI ELECTRIC CORP 发明人 OKADA MAKIO;SUZUKI YASUHITO;NAKAMURA SHIZUKATSU
分类号 B21D5/01;H01L23/50 主分类号 B21D5/01
代理机构 代理人
主权项
地址