摘要 |
PURPOSE:To obviate a strict alignment operation during a photolithographic process when a fine semiconductor memory device is manufactured by a method wherein a contact hole is made and a first electrode is patterned by using a substantially identical resist pattern. CONSTITUTION:A resist pattern 39, for contact hole formation use, having an opening in a part corresponding to the upper side of an interelectrode connection region 21 in an electrode patterning layer 37 is formed. Then, a main region 41 for a first electrode and a contact hole 43 are formed by using the same resist pattern 39; after that, said resist pattern 39 is removed. In succession, a polysilicon layer 45 used to fill the main region 41 and the contact hole 43 again is formed. Thereby, it is possible to reduce an alignment operation during a photolithographic process used to form the first electrode to one time. Accordingly, the number of processes can be reduced when the first electrode is formed; it is possible to avoid that an electric charge to be accumulated in the first electrode is leaked; thereby it is possible to enhance a yield. |