发明名称 MANUFACTURE OF SEMICONDUCTOR MEMORY DEVICE
摘要 PURPOSE:To obviate a strict alignment operation during a photolithographic process when a fine semiconductor memory device is manufactured by a method wherein a contact hole is made and a first electrode is patterned by using a substantially identical resist pattern. CONSTITUTION:A resist pattern 39, for contact hole formation use, having an opening in a part corresponding to the upper side of an interelectrode connection region 21 in an electrode patterning layer 37 is formed. Then, a main region 41 for a first electrode and a contact hole 43 are formed by using the same resist pattern 39; after that, said resist pattern 39 is removed. In succession, a polysilicon layer 45 used to fill the main region 41 and the contact hole 43 again is formed. Thereby, it is possible to reduce an alignment operation during a photolithographic process used to form the first electrode to one time. Accordingly, the number of processes can be reduced when the first electrode is formed; it is possible to avoid that an electric charge to be accumulated in the first electrode is leaked; thereby it is possible to enhance a yield.
申请公布号 JPH02133959(A) 申请公布日期 1990.05.23
申请号 JP19880288649 申请日期 1988.11.15
申请人 OKI ELECTRIC IND CO LTD 发明人 KOBAYASHI YASUTAKA
分类号 H01L27/04;H01L21/822;H01L21/8242;H01L27/10;H01L27/108 主分类号 H01L27/04
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