发明名称 CHARACTERISTIC MEASUREMENT OF SEMICONDUCTOR ELEMENT
摘要 PURPOSE:To achieve a high speed and highly reliable characteristic measurement of a semiconductor by outputting outputs of the semiconductor or the like to a processor when changes in the outputs in response to a sweep with a power source exceeds a specified value. CONSTITUTION:Characteristics of a semiconductor 2 to be measured such as solar simulator are measured by a scanning voltage for measurement gradually increasing from a programmable power source 3. Then, the measuring voltage and an output current of the semiconductor 2 are measured through a voltage measuring device 4 and current measuring apparatus 5 respectively and memorized into a data processor 6. In this case, only when the output change of the semiconductor 2 is large, the measured voltage and current are inputted into the processor 6, not when it is small. Therefore, the measured values are memorized at a high frequency for the area large in the characteristic change. In the repeated measurements to be made several times afterwards, measured current corresponding to the measuring voltage memorized in the processor 6 is memorized to determine the average value thereof. Such an arrangement of averaging amply required measured values enables a high speed and highly reliable characteristic measurement of semiconductors.
申请公布号 JPS5868679(A) 申请公布日期 1983.04.23
申请号 JP19810167598 申请日期 1981.10.19
申请人 MITSUBISHI DENKI KK 发明人 YOSHIDA MASAHIRO;MITSUI KOUTAROU;YOSHIDA SUSUMU;ODA TAKAO;YUKIMOTO YOSHINORI
分类号 G01R31/26;(IPC1-7):01R31/26 主分类号 G01R31/26
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