| 摘要 |
<p>PURPOSE: To make high-density mutual connection for a multi-chip carrier substrate by patterning a superconductive material layer with high critical temperature through a photoengraving process and forming a superconduction trace on an insulating substrate. CONSTITUTION: Layers 12, 22, 26, 30, and 46 of superconductive materials with high critical temperature are deposited on electric insulating material layers 14, 20, 24, 32, 44, and 48. Their insulating layers and superconductive material layers have considerably matching crystal structure. Then the superconduction layers are patterned by removal by a photoengraving process and selective etching, or transformation of the superconduction layers into insulators by an ion shock. Unetched parts of the superconduction layers or untransformed parts form the part of a superconductive electric mutual connection circuit. On the superconduction circuit layers, layers of other insulating substances are deposited and a via hole is formed in them. Then those steps are repeated until a complete mutual connection is made and layers of superconductive materials and insulating materials are added to form the connection body.</p> |
