Dynamic memory device and method for manufacturing the same.

摘要

Element regions (1) which are adjacent to each other in a channel width direction are displaced from each other in a channel length direction by 1/4 pitch. Cell plate electrodes (2) are formed over the element regions (1) through a capacitor insulation film to extend in an oblique direction. Groove portions (3) formed in a step-form corresponding to the shape of the respective transistor forming regions (12) of the element regions (1) are each formed between corresponding two adjacent ones of the cell plate electrodes (2). Word lines (8 min ) are formed in a stripe configuration to extend in a channel width direction and used to directly apply potentials to the element regions (1). Contact holes (5 min ) are formed for contact hole opening preparation regions of the element regions (1). Bit lines (6 min ) are formed in a stripe configuration to extend in a length width direction and are connected to respective element regions (1) via the contact holes (5 min ).