发明名称 PROGRAMMABLE READ ONLY MEMORY DEVICE
摘要 <p>PURPOSE:To quicken a readout operation by reducing the recovery time of a gate circuit bringing a built-in register in the initializing state. CONSTITUTION:When a control signal is in a 2nd logic level, a register is set to the initialize state by a gate circuit and when the control signal changes from the 2nd to a 1st logic level, the register is released from the initialize state and the gate circuit starts the recovery operation. Thus, a level change transmission means is provided to the gate circuit, the recovery time is reduced to quicken the readout operation. Thus, a PROM device is provided with major sections such as a memory cell section 10 storing an initial data to clear or set the register to the preset state, a PROM array 11 able to rewrite data by a program, an address buffer 12, an address decoder/driver 13, a multiplexer 14 and a gate circuit 15.</p>
申请公布号 JPH02134800(A) 申请公布日期 1990.05.23
申请号 JP19880286790 申请日期 1988.11.15
申请人 FUJITSU LTD 发明人 HARADA MITSUHIRO
分类号 G11C17/00;G11C16/06 主分类号 G11C17/00
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