| 摘要 |
PURPOSE:To perform high density printing by making a fine pitch by doping a single crystal semiconductor substrate with impurities to form a membrane transistor for driving each membrane resistor element. CONSTITUTION:Membrane transistors 3 for driving membrane heating elements 2... composed of polycrystalline silicon are constituted by doping an N-type silicon substrate 1 having the membrane heating elements 2... arranged and formed thereto with a P-type impurity of a B-ion to form a P-type region 11 and doping said P-type region 11 with an N-type impurity of a P-ion to form an N-type region 12 and forming gate electrodes 14 thereon through wiring patterns 15 and gate insulating films 13. Since the respective channels of the membrane transistors 3... can be formed within a single crystal silicon substrate 1, the mobility of electricity of the membrane transistors 3... is extremely well. Therefore, the width and length of a gate can be reduced and a fine pitch can be achieved. |
