发明名称 MOFSET HAVING A THERMAL PROTECTION
摘要 <p>1. Semiconductor component, including a MOSFET having a semiconductor body with two main surfaces as well as a gate electrode and a source electrode, characterized by the features : a) the semiconductor body of a semiconductor switch (5) with p-n junction is fastened on one of the main surfaces of the semiconductor body (1) of the MOSFET, which semiconductor switch turns on when a predetermined temperature of its p-n junction is reached, b) the two semiconductor bodies (1, 5) are connected together thermally, c) the semiconductor body of the semiconductor switch (5) has two main electrodes (10, 11), electrode (G) and to the source electrode (S), respectively.</p>
申请公布号 EP0208970(B1) 申请公布日期 1990.05.23
申请号 EP19860108766 申请日期 1986.06.27
申请人 SIEMENS AKTIENGESELLSCHAFT 发明人 TIHANYI, JENO, DR.-ING.;BIERLMAIER, JOHANN
分类号 H01L29/78;H01L21/8234;H01L23/34;H01L25/18;H01L27/04;H01L27/06;H03K17/08;H03K17/0812 主分类号 H01L29/78
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