| 摘要 |
PURPOSE:To improve the utilization efficiency of raw gas and to stably form a homogenous deposited film at high speed by introducing raw gas at the center of an electric discharge space and in parallel with a cylindrical substrate. CONSTITUTION:A reaction vessel 101, in which the cylindrical substrate 105 is set, is evacuated to a specified vacuum, the substrate 105 is heated to a specified temp. by a heater 107, and the raw gas is introduced from the plural gas discharge holes 108' of a raw gas supply pipe 108 in parallel with the substrate 105 at the center of the electric discharge space 106. Microwave energy is then introduced into the reaction vessel 101 through a dielectric window 102 to excite and dissociate the gas in the vessel 101, and a deposited film is formed on the surface of the substrate 105. The raw gas is preferably introduced from the plural gas discharge holes 108' within <=20% of the distance from the center of the discharge space 106 of the shortest distance from the space 106 to the substrate 105. In addition, plural gas inlet pipes 108, e.g., about ten, are preferably used. |
