发明名称 CUTTING OF WAFER FOR SEMICONDUCTOR PRESSURE SENSOR
摘要 <p>PURPOSE:To prevent the generation of tipping, to improve a yield and to improve a yield per wafer by a method wherein a groove having inclined planes is formed in the surface of a wafer with a glass pedestal bonded to its rear and the wafer is cut at the parts of the inclined planes using a blade. CONSTITUTION:Part of each of SiN and SiO2 films 15 and 19, which are provided on both surfaces of a substrate 11, is selectively removed to form windows 16 and 17 and both surfaces of the substrate 11 are etched from these window parts to form a recessed part 18 in the rear of the substrate and a V-shaped groove 19 in the surface of the substrate. Then, parts of the film 15 on the surface are removed to form contact holes and after the films 19 and 15 on the rear are all removed, a glass pedestal 2 is bonded to the rear. Moreover, a resin blade 3 is inserted in the groove 19 and a silicon wafer 1 is cut in the inclined planes on both sides of the groove to form a multitude of chips. Thereby, the generation of tipping can be prevented and a yield is improved and at the same time, the width of the cutting part is made narrow to improve a yield per wafer and the manufacturing cost of a pressure sensor is reduced.</p>
申请公布号 JPH02132843(A) 申请公布日期 1990.05.22
申请号 JP19880287163 申请日期 1988.11.14
申请人 FUJIKURA LTD 发明人 HASHIMOTO HIROKAZU;SHIMOMURA AKIO
分类号 H01L21/301;B81C1/00;H01L21/78;H01L29/84 主分类号 H01L21/301
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