SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

摘要

PURPOSE:To improve the degree of integration by constructing a non-volatile memory cell of an EEPROM of a non-volatile RAM memory cell with flush type (single transistor structure). CONSTITUTION:A memory cell M of a non-volatile RAM includes a flush type non-volatile memory cell ME formed of a field effect transistor QF. It further includes a memory cell MD formed of a series circuit of an information storage capacitance element C and a cell selection field effect transistor QM connected in series to a drain area 4 of the flush type non-volatile memory cell ME. Therefore, the flush type non-volatile memory cell ME takes a single transistor structure in which the occupation area of the non-volatile RAM memory cell M can be reduced corresponding to a fraction of the cell selection field effect transistor. Hereby, the degree of integration can be improved.