| 摘要 |
PURPOSE: To provide a polysilicon transistor(TR) and a bulk TR and form an SRAM cell by making a TR includes a source and a drain formed in an unetched part of a 2nd polysilicon layer and a gate formed of part of an unetched part of a 1st polysilicon layer below a channel. CONSTITUTION: An active area 31 is surrounded by a field oxide film. The 2nd polysilicon layer 35 of a self-align strip is divided into the channel 66, drain 63, and source 65 of a P-channel TR as part of the 2nd polysilicon part 41 where an ONO layer 36 above the 2nd polysilicon layer 35 is not removed. A titanium nitride part 64 connects the drain 63 of the P-channel TR to the area 58 of an N-channel TR so as to bring the drains of the N-channel and P-channel TRs into contact with each other. Self-align strips cross each other on the active area 31 so that at least two parts of the active area 31 are left uncovered. Therefore, the source and drain of the N-channel TR can be formed in the active area 31 after the self-align strips are formed. |
