| 摘要 |
<p>PURPOSE:To obtain a mask for X-ray exposure having high pattern accuracy and a stable characteristic on standing by covering an X-ray absorber film pattern formed on a translucent supporter with a gas admission preventive film formed so thin that the value of its own stress may become zero. CONSTITUTION:A silicon carbide film 22 is formed on the surface of a silicon substrate 21 by an LPCVD method. Next, a W-film 23 and a silicon oxide film 25 are in order piled up on the surface of one side. The silicon oxide film 25 is patterned by reactive ion etching having pattern-formed PMMA 26 as a mask. A tungsten film is patterned having the silicon oxide film 25 pattern- formed in this way and by reactive ion etching in order to form a micro-X-ray absorber pattern. Later, a silicon nitride film is formed as a gas admission preventive film 24 by a plasma CVD method. Next, the silicon carbide film 22 on the rear side of a substrate 21 is patterned and etching is performed from the rear side having this as a mask for forming an opening part (h). Then, the silicon carbide film is removed to form a mask for X-ray exposure.</p> |
