| 摘要 |
PURPOSE:To improve the junction withstand voltage by dividing a gate electrode of a high voltage field effect transistor into a plurality of electrodes located in a direction of channel length, each being independently controllable, end providing, on a pn junction between a drain or source region and a channel formation area, the gate electrodes disposed on one end of the divided gate electrodes. CONSTITUTION:A gate electrode of a high withstand voltage field effect transistor QS is divided into a gate electrode 5 and a withstand voltage controlling gate electrode 7 located in a direction of channel length each independently controllable. A withstand voltage voltage controlling gate electrode 7 among the divided gate electrodes located on one side is provided on a pn junction between an n-type semiconductor area 3B used as a drain region and a channel formation area. With the above construction, the same or substantially equal control voltage as or to voltage exerted on the n-type semiconductor area 38 is applied to the withstand voltage controlling gate electrode 7 on the pn junction to moderate electric field intensity in the vicinity of the n-type semiconductor area 3B. Hereby, junction voltage of a high withstand voltage field effect transistor QS can be improved. |
