| 摘要 |
PURPOSE:To keep charge holding characteristics from deteriorating by patterning the upper surface of a storage electrode on a substrate to form a recessed portion, forming an insulating film for a capacitor on the storage electrode, and forming a plate electrode on the insulating film for a capacitor and patterning the plate electrode. CONSTITUTION:After a storage electrode 18 is selectively formed on a silicon substrate 10, a resist is patterned, and using the resist as a make a recessed portion 18a is formed in order to increase the surface area of the storage electrode 18. Then, after the resist used for the formation of the recessed portion 18a is removed, an insulating film 19 for capacitor comprising a silicon nitride film is deposited over the entire surface of the substrate. Further, a plate electrode 21 is formed on the insulating film 19 for capacitor, the plate electrode 21 is patterned. Hereby, the insulating film 19 and the plate electrode 21 can uniformly be formed with ease to the interior of the recessed portion 18a, and hence any fault such as void can be reduced to improve charge holding characteristics. |
