| 摘要 |
PURPOSE:To enhance integration by self-aligning the end of a field insulating film and the end of an insulating film covering the gate electrode of a transistor with a trench for a capacitor. CONSTITUTION:A P<-> type layer 12 as a channel stopper and an SiO2 film 13 as a field insulating film are first formed on an element isolating region of an Si substrate 11. Further, with an SiO2 film 16 and a polycrystalline Si layer 15 as masks an N<-> type layer 17 is formed by ion implanting. Then, an SiO2 film 18 is deposited on the whole surface, the whole surface is etched, the film 18 remains only on the sides of the layer 15 and the film 16, and the layer 17 is exposed in a self-alignment. Thereafter, the layer 17 of the side to be in contact with bit lines is covered with resist 21. A trench 22 is formed on the region of the substrate 11 in which three sides are covered with the film 13 and the remaining one side is surrounded with the films 16, 18. Accordingly, the trench 22 is self-aligned with the ends of the films 13, 16, 18. |
