发明名称 |
METHOD FOR FABRICATING SUPERCONDUCTING MATERIALS AND SUPERCONDUCTIVE THIN FILMS |
摘要 |
<p>Chemical reactions of superconducting raw materials (10) with active oxygen atoms and their charged particles are accelerated by using at least oxygen plasma in the fabrication process of a superconductive body (1). Thereby an ionic crystal is grown in a short time, which provides stable superconducting materials of high quality such as high critical temperature and low resistivity. In another aspect, a substrate (2) is irradiated simultaneously with streams (13) of vapor of metal elements, of which a superconductive body is to be composed, and a stream (13) of gas of ions generated in a plasma chamber (20) and film growth is effected while keeping the substrate (2) at a temperature higher than 400 DEG C to produce a ceramic type superconductive thin film.</p> |
申请公布号 |
EP0302506(A3) |
申请公布日期 |
1990.05.16 |
申请号 |
EP19880112744 |
申请日期 |
1988.08.04 |
申请人 |
HITACHI, LTD. |
发明人 |
OKAMOTO, YUKIO;AIDA, TOSHIYUKI;MIYAUCHI, KATSUKI;TAKAGI, KAZUMASA;FUKAZAWA, TOKUUMI;TAKAYAMA, SHINJI |
分类号 |
C23C4/10;C23C14/00;C23C14/08;C23C14/32;C23C16/40;C23C16/517;H01L39/24;(IPC1-7):H01L39/24;C23C14/30;C04B35/00;C23C14/54 |
主分类号 |
C23C4/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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