| 摘要 |
PURPOSE:To form fine patterns of a conjugation system high polymer by an exposing device using a high-pressure mercury lamp as a light source by forming the resist of a soln. of a high polymer having a specific repeating unit. CONSTITUTION:This resist consists of the soln. of the high polymer having the repeating unit expressed by the formula I. In the formula, R1 denotes the formula A or B; R2 denotes hydrogen or hydrocarbon group of 1 to 10C; R3 and R4 denote hydrogen or 1 to 5C alkyl group or alkoxy group; R5 denotes 1 to 5C hydrocarbon group; m denotes 1 to 2 integer. This resist is dried after application and is then exposed by the exposing machine using the high-pressure mercury lamp. The resist patterns obtd. by development are partly of the conjugation system but the greater part remain as the structure of the precursor and, therefore, the fine patterns of the conjugation system high polymer are obtd. by converting this precursor to the conjugation system high polymer. |
