| 摘要 |
<p>A method for manufacture of a semiconductor wafer in a manner to attain a high uniformity in the thickness of a semiconductor layer, by first forming hardly polishable stoppers of mutually different thicknesses in the semiconductor, then polishing the semiconductor until the thicker stopper is exposed on one main surface of the semiconducbor, subsequently removing the thicker stopper to attain a thickness less than that of the thinner stopper, and thereafter polishing the aforesaid one main surface of the semiconductor until the thinner stopper is exposed. There is also disclosed a semiconductor device of a quantum well wire structure comprising a semiconductor layer formed on an insulator substrate, a thermally oxidized film of the semiconductor layer formed on such layer, and a gate electrode formed on one side of the semiconductor layer, wherein the channel width is determined by the thickness of the semiconductor layer. And a method of manufacturing such a semiconductor device with high precision comprises a step of forming a thin film by thermally oxidizing a semiconductor layer on an insulator substrate, a step of selectively removing the thin-film semiconductor layer, and a step of forming a gate electrode on one side of the semiconductor layer removed selectively.</p> |
