| 发明名称 |
Semiconductor switch with parallel lateral double diffused MOS transistor and lateral insulated gate transistor |
| 摘要 |
A semiconductor switch comprising a lateral DMOS and a lateral IGT both of which can be fabricated in a monolithic integrated circuit. In operation the lateral DMOS stays on while the lateral IGT is switched off in order to reduce turn off power dissipation.
|
| 申请公布号 |
US4926074(A) |
申请公布日期 |
1990.05.15 |
| 申请号 |
US19880262564 |
申请日期 |
1988.10.24 |
| 申请人 |
NORTH AMERICAN PHILIPS CORPORATION |
发明人 |
SINGER, BARRY M.;BRUNING, GERT W.;MUKHERJEE, SATYENDRANATH |
| 分类号 |
H01L27/088;H01L29/739;H02M3/158;H03K17/00;H03K17/082;H03K17/567 |
主分类号 |
H01L27/088 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
