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发明名称
VAPOR PHASE EPITAXY FOR COMPOUND SEMICONDUCTOR CRYSTAL LAYER AND REACTION TUBE THEREFOR
摘要
申请公布号
JPH02126632(A)
申请公布日期
1990.05.15
申请号
JP19880279953
申请日期
1988.11.05
申请人
NIPPON TELEGR & TELEPH CORP <NTT>
发明人
KOBAYASHI TAKASHI
分类号
C30B25/08;H01L21/205
主分类号
C30B25/08
代理机构
代理人
主权项
地址
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