| 摘要 |
PURPOSE:To make a substantial width of an element-isolation region not larger than a minimum working dimension by a method wherein an element-isolation insulating film has a slope, a semiconductor layer is formed in a state that it partly overlaps the element-isolation insulating film and a groove of a depth reaching a substrate is formed in a gate region. CONSTITUTION:An element-isolation insulating film 3 has a slope and is formed to have a sharp ridge. A selective epitaxial growth operation is executed in a region surrounded by this element-isolation insulating film 3; a silicon layer 4 is formed in a state that it is overlapped partly with the element-isolation insulating film 3. A gate region of the silicon layer 4 is etched selectively; in addition, a groove 7 obtained by etching a substrate 1 down to a prescribed depth is formed; a gate electrode 10 is formed in such a way that it fills the groove 7 via a gate insulating film 9. Accordingly, a substantial element-isolation width can be made smaller than a minimum working size. In addition, a substantially shallow source-drain diffusion layer is obtained; it is possible to obtain an excellent element characteristic whose size is fine and whose short-channel effect is small. |
