| 摘要 |
A thin film having a large high Kerr rotation angle is formed of a compound having a composition represented by the following formula (I): JxLyQ(100-x-y) (I) wherein J: at least one of F, Cl, Br and I; L: at least one of B, C, Al, Si, P, As, Sb, Bi, Se, Te, Ti, V, Cr, Mn, Ni, Ga, Ge, Zr, Nb and Mo; Q: at least one of Fe and Co; x: a value of 3-80; and y: a value satisfying the following equation (II): 3</=x+y</=80 (II) The film is produced by reacting a halogen or halogen-containing gas, which has occurred as a result of decomposition of a halogen compound, with a metal plasma or halogen-containing metal plasma and allowing the resultant component to deposit as a thin film on a substrate.
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