| 摘要 |
A plasma type metal plating apparatus is characterized by a magnetically confined electrical plasma containing a high percentage of metal ions directed toward the target substrate, containing the passages with passage walls to be plated, and means for increasing the longitudinal velocity of the moving ions of the plasma in the region of the substrate prior to incidence of those ions on the substrate. The method of plating minute diameter high aspect ratio holes in microelectronic integrated circuit substrates employs steps of directing an electrical plasma containing a high percentage of metal ions, suitably 80% or greater, toward the microelectronic substrate; and adding energy to the plasma in the vicinity of said substrate to increase longitudal movement velocity of the ions prior to incidence of said ions on said substrate.
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