| 摘要 |
PURPOSE:To improve the yield and characteristics of a semiconductor integrated circuit by providing vernier patterns outside the circuit pattern area of the mask. CONSTITUTION:The photomask consists of the circuit pattern area 2 formed on a transparent glass substrate 1 and the vernier patterns 3 formed at the four corner parts outside the circuit pattern, and the respective vernier patterns are formed in an X-axial and a Y-axial direction. By using this photomask, a position shift generated in circuit pattern drawing is measured quantitatively by checking the vernier patterns at the respective corner parts through a microscope in an inspecting process. Thus, the quantity of the position shift of the pattern which exerts no influence upon the manufacture yield and characteristic deterioration of the semiconductor integrated circuit is found as a prescribed value and the position shift measurement result obtained by using the vernier patterns is matched to regard a mask in the prescribed range as a conforming article. Consequently, the manufacture yield of the semiconductor integrated circuit can be improved. |
