| 摘要 |
PURPOSE:To widen a wiring region broader than a gate array and to eliminate unnecessary element by commonly using a pattern before an epitaxial layer is grown to a pattern before an isolating pattern between elements after the layer is grown, and employing an exclusive pattern for each type after the isolating pattern between the elements. CONSTITUTION:A N-type buried layer 2, a P-type insulator isolating layer 3 are formed by diffusing at all positions to be possibly used for various types on a P-type silicon substrate 1. A N-type epitaxial layer 4 is formed approx. 1mum thick on the substrate. Then, a nitride film is formed on the surface of the epitaxial layer on the top of the layer 3 used only for the type to be formed, and thermally oxidized to form an oxide film 5. That is, the epitaxial layer is converted to the film 5 to cover the surfaces of the layers 2, 3 of the region not used with the film 5. Thus, the remaining layer 4 is used as an element region to form a desired semiconductor element such as a transistor, a diode, a resistor, etc. |
