| 摘要 |
PURPOSE:To prevent the generation of cracks of a semiconductor substrate by forming firstly a protective film on the semiconductor substrate on which an electrode is arranged, and providing the protecting film with a taper. CONSTITUTION:An interlayer insulating film 2, an Al electrode pad 3, and a cover insulating film 4 are formed on a semiconductor substrate 1; an aperture is formed on the cover insulating film 4 on the Al electrode pad 3; a polyimide resin film 11 is spread and hardened by heat treatment; the polyimide resin film 11 on the Al electrode pad 3 is etched in the form of a taper; a pattern of a photosensitive resin film 13 is newly formed; by using this pattern as a mask, a copper bump 7 is plated; a metal film 8 is formed on the copper bump 7 by the similar electroplating, in order to increase the bonding strength to a lead at the time of assembling; after the photosensitive resin film 13 is eliminated, a bump electrode structure is obtained by using the copper bump as a mask and etching a barrier metal film 12. Thereby, the percentage of defective elements can be decreased. |
