| 摘要 |
PURPOSE:To obtain a light emitting diode having high light emitting efficiency by providing an insulating film on the surface of the end of a P-N junction, and providing a P<+> type diffused layer corresponding only to a P-type electrode on the surface of a P-type semiconductor layer. CONSTITUTION:With an SiO2 film 4 as a mask a P-type GaAs epitaxial layer 3 and an N-type GaAs epitaxial layer 2 are partly selectively etched to form groove 5. In this case, the depth of the groove 5 is so etched as to become approx. 15mum from a P-N junction 6 to the layer 2 side. Then, the film 4 is all removed, and the surface of the epitaxially grown layer is etched. Thereafter, a silicon nitride film 7 is laminated on the layers 3, 2. Thereafter, the film 7 is selectively diffused to form a diffused layer 8. Subsequently, a P<+> type diffused layer 9 is formed. Then, aluminum is deposited on the film 7, Al remains at a position to be overlapped 10mum on the whole S3N4 film at a position covering the diffused part 8, and heat treated to form a P-type electrode 10. |
