| 摘要 |
PURPOSE:To decrease a proportion defective of wavefront aberration by specify ing a thickness of the part of a light-emitting resin covering the light-emitting end face of a laser diode. CONSTITUTION:A lead frame in which a number of substrates 2 and leads 9, 10 as required for several semiconductor laser devices are formed integrally is prepared. A submount 3 to which a laser diode element 5 is bonded to a widened section 2 of each substrate 1 and then wires are bonded to the element. Each device is sealed with a light-transmitting resin 14 and the lead frame is cut off to separate the individual semiconductor laser devices. The light- transmitting resin 14 has a thickness (x) of 0.2 to 1mm on the light-emitting end face 6 of the diode element 5. |
