GAAS DUAL GATE FET,申请号JP19880278862-传众专利搜索

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发明名称	GAAS DUAL GATE FET
摘要
申请公布号	JPH02125473(A)	申请公布日期	1990.05.14
申请号	JP19880278862	申请日期	1988.11.02
申请人	NEC CORP	发明人	OGAWA YOSHITO
分类号	H01L29/80;H01L29/417	主分类号	H01L29/80
代理机构		代理人
主权项
地址

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