| 摘要 |
PURPOSE:To lessen the defect rate in a memory cell for redundancy and to contrive the improvement of the substitution rate to the memory cell for redundancy by a method wherein the storage capacitance of the memory cell for redundancy is made larger than that of a main memory cell which is normally used. CONSTITUTION:A transistor, which is constituted of a gate electrode 2 and diffused regions 3 and 4, a storage capacitance part, which is constituted of the region 3 and an electrode 5, and a digit line 6, which is connected with the region 4 and is provided through an interlayer insulating film which is provided on a word line 1 and the electrode 5, are provided to constitute a memory cell for redundancy. Moreover, this storage capacitor part has a storage capacitance larger than that of a main memory cell in a constitution, wherein its width on the side of the word line 1 is identical with that of a storage capacitor part of the main memory cell and its width on the side of the digit line 6 is made wider than a diffused region width 7 of the main memory cell. Thereby, decrease in a storage capacitance due to a defect generated in a process can be reduced and the substitution rate to a redundancy circuit can be improved. |
