| 摘要 |
PURPOSE:To set the difference of the energy gaps of a clad layer and an active layer to 0.3eV or more and to improve a light oscillation efficiency by forming a double hetero structure of ZnxCd1-xSeyTe1-y mixed crystal lattice-matched to an InP board as a material on the board. CONSTITUTION:This light emitting element is formed in a double hetero structure by sequentially laminating, for example, a P-type ZnSeyTe1-y clad layer 2 having largest energy gap of 2.52eV of mixed crystal ZnxCd1-xSeyTe1-y lattice- matched with x=-0.47 and y=0.54 of composition ratio by a Vegard's rule, a ZnxCd1-xSe active layer 3 having smallest energy gap of 2.20eV and no polarity, and an n-type ZnSeyTe1-y clad layer 4 having largest energy gap of 2.52ev on a p-type InP board 1. |
