| 摘要 |
PURPOSE:To obtain a III-IV compound semiconductor layer of high quality wherein residual stress and crystal defects are little by laminating at least three layers of respectively specified semiconductors. CONSTITUTION:At least three layers of a first semiconductor layer 2 composed of III-IV compound, a second semiconductor layer 3 and a third semiconductor layer 4 are laminated on a group IV substrate 1. The second semiconductor layer 3 is composed of compound having lattice constants capable of generating stress in the direction opposite to the stress generating at the time of laminating the first semiconductor layer 2 which is caused by the difference of thermal expansion coefficients between the group IV substrate 1 and the first semiconductor layer 2. The third semiconductor layer 4 is composed of the same III-IV compound as the first semiconductor layer 2. Thereby, residual stress and crystal defects can be reduced, and a III-IV compound semiconductor base layer of high quality is obtained. |
