| 摘要 |
PURPOSE:To obtain a vertical resist pattern which has a small film loss and no taper by development by applying resist and processing the surface with a solution of a compound with a photosensitive radical. CONSTITUTION:A substrate 1 is coated with the resist 2, whose surface 20 is processed with the solution 3 of the compound with a sensing radical and made insoluble to a liquid developer; and the resist 20 is exposed selectively, and developed with the liquid developer to remove the exposed part of the resist 2, thereby forming a pattern 2A of the resist. Thus, the resist surface is processed with the solution of the compound with the sensing radical to bind the sensing radical with the resin or sensing radical in the resist, and the resist surface is made insoluble to eliminate the film reduction in the development of the resist at the unexposed part, thereby evading the pattern defect at a mask edge due to light diffraction. Consequently, the resist pattern is formed in an excellent shape. |
