| 摘要 |
<p>PURPOSE:To reduce the deterioration of breakdown strength and the short- circuiting failure caused by cracks and the like by a method wherein the gap between a protective film and an electrode is decreased be forming an N<+> a-Si layer on the end-portion of a first insulating film. CONSTITUTION:An N<+>a-Si layer 7 as a contact layer and a Ti film 8 as a metal film are laminated while a resist film 6 is left. In this process, the N<+> a-Si layer 7 is formed by a film formation method wherein the creeping-in of flying particle generates, so that the flying particle attaches also to a recessed part between the resist 6 and an SiO2 film 4', which recessed part is formed because an SiN film 4'' is smaller than the SiO2 film 4'. As the result, the end- portion of the N<+> a-Si layer 7 is formed so as to cover the end portion of the SiO2 film 4'. Thereby, the gap between a source.drain electrode and a protective insulating film is eliminated, so that cracks become hard to generate and the deterioration of TFT characteristics such as the decrease of breakdown strength can be avoided.</p> |
